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* http://onsemi.com V(BR)DSS −30 V RDS(on) TYP 155 mW @ −10 V 240 mW @ −4.5 V P−Channel MOSFET S ID Max (Note 1) −1.95 A .

G MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Drain C.

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